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Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSbThe effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the
Electronic structure and the local electroneutrality level of SiC polytypes from quasiparticle calculations within the GW approximation
Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate of thermal neutrons (E ≤ 0.1 MeV) in the damage build-up in GaN is shown.
On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level = (5−6) × 1018 cm−3 and in pinning of the Fermi level at the limiting position F lim close to E V + 0
Ab initio calculations of optical constants of GaSe and InSe layered crystals are characterized by the most pronounced polarization anisotropy in the range of photon energies of ∼4–7 eV
On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor(GaSe) = Ev + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal
The optical properties of 9 MeV electron irradiated GaSe crystalsThe optical properties of 9 MeV electron irradiated GaSe crystals
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