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Electronic structure and the local electroneutrality level of SiC polytypes from quasiparticle calculations within the GW approximation
Influence of size effects on the electronic structure of hexagonal gallium telluride semiconductor with a forbidden band width varying from 0.8 eV in the bulk material to 2.3 eV in the monolayer.
Electronic structure of CuCl1-xBrx solid solutions: first-principles calculations in the meta-GGA approximation with the coefficient b ~ 0.09 eV.
The optical properties of 9 MeV electron irradiated GaSe crystalsThe optical properties of 9 MeV electron irradiated GaSe crystals
Ab initio calculations of optical constants of GaSe and InSe layered crystals are characterized by the most pronounced polarization anisotropy in the range of photon energies of ∼4–7 eV
Raman spectra of single-walled carbon nanotubes synthesized by aerosol CVD-method using ferrocene and CuNi nanoparticles
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