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Iron silicide-based ferromagnetic metal/semiconductor nanostructures
Ovchinnikov, S. G., Varnakov, S. N., Lyashchenko, S. A., Tarasov, I. A., Yakovlev, I. A., Popov, E. A., Zharkov, S. M., Velikanov, D. A., Tarasov, A. S., Zhandun, V. S., Zamkova, N. G.
on Si substrates by molecular-beam epitaxy with in situ control of the structure, optical, and magnetic
RADIATIONAL PROPERTIES OF CORRUGATED GRADED-INDEX WAVE-GUIDES WITH METAL OR SEMICONDUCTOR CLADDING
ATAYA B.A., OSOVITSKII A.N.
from a corrugated graded-index waveguide with metal or semiconductor cladding for structures
Моделирование процессов переноса электронов в полупроводниковой структуре на основе графена
Муравьев, В. В., Мищенко, В. Н., Murav'ev, V. V., Mishchenka, V. N.
-dimensional semiconductor structure containing a single layer of graphene using the Monte-Carlo method are presented
Design of SrZr0.1Mn0.4Mo0.4Y0.1O3-δ heterostructured with ZnO as electrolyte material: Structural, optical and electrochemical behavior at low temperatures
Farooq N., Luque R., Len T., Osman S.M., Qureshi A.M., Nazir M.A., Rehman A.U.
P-type semiconductor SrZr0.1Mn0.4Mo0.4Y0.1O3-δ (SZMMY) is for the first time composited with n
Anisotropic ferromagnetism in Co-implanted TiO2 rutile
Akdogan N., Rameev B., Khaibullin R., Westphalen A., Tagirov L., Aktaş B., Zabel H.
-crystalline (1 0 0), (0 0 1) and (1 1 0) TiO2 substrates of rutile structure have been heavily irradiated by Co
Theoretical aspects of studies of oxide and semiconductor surfaces using low energy positrons
Fazleev N., Maddox W., Weiss A.
- and Ga-rich reconstructed GaAs(100) surfaces. The variations in atomic structure and chemical composition
The Effect of Compressive and Tensile Strains on the Electron Structure of Phosphorene
Krivosheeva, A. V., Shaposhnikov, V. L., Štich, I.
A new promising semiconductor material (phosphorene) is studied using theoretical simulation
Positron probes of the Ge(1 0 0) surface: The effects of surface reconstructions and electron-positron correlations on positron trapping and annihilation characteristics
Fazleev N., Jung E., Weiss A.
their sensitivity to the specific atomic structure of the topmost layers of Ge(1 0 0). A comparison with PAES data
All-dielectric metasurface filters for mid-infrared range
Dombrovskaya Z.O., Rybina A.V., Belov A.A., Bogolyubov A.N.
of the structure, it can be a narrow or a wide-range filter. The reason is that the incident radiation excites
Optical phonons in the kesterite Cu2ZnGeS4 semiconductor: polarized Raman spectroscopy and first-principle calculations
Guc, M., Litvinchuk, A., Valakh, M., Levchenko, S., Bodnar, I. V., Dzhagan, V. M., Izquierdo-Roca, V., Arushanov, E., Pérez-Rodríguez, A., Боднарь, И. В.
A comprehensive vibrational analysis of the kesterite Cu2ZnGeS4 semiconductor (space group I

Страница 11 из 5172

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