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Low-Frequency Admittance of Capacitor with Working Substance “Insulator – Partially Disordered Semiconductor – Insulator” defects is of practical interest in the development of radiation-resistant varactors. The capacitance
Численное моделирование термолюминесценции кварцевой частицы, therefore, the mineral is applicable for dating. Secondly, it is necessary to control the heating mode
ANALYSIS AND TECHNOLOGY DESIGN FOR THE PRODUCTION OF JEWELRY WIRE FROM NEW PRECIOUS METAL ALLOYS
based on gold, silver and palladium is described. New technological modes of processing new precious
Структура и свойства науглероженного слоя конструкционной стали после различных режимов финишной термообработки and developed volumetric hardening modes that ensure elimination
of overheating defects with obtaining high
Врожденные пороки сердца у пациентов старше 60 лет: структура и непосредственные результаты коррекцииObjective. To present the structure of congenital heart defects (CHD), the algorithm
Analytical calculations in maple to implement the method of adiabatic modes for modelling smoothly irregular integrated optical waveguide structures of adiabatic waveguide modes, applied in mathematical modeling of smoothly irregular integrated
Semiconductor A3B5 nanostructures for infrared femtosecond lasers post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn
Electrochemical deposition of zinc oxide on a thin nickel buffer layer on silicon substrates and galvanostatic modes for acquiring polycrystalline ZnO films. Scanning electron microscopy, X-ray diffractometry
Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate scattering modes at 210, 300 and 670 cm−1 linked to defects in Ga and N sublattices. X-ray diffraction
Страница 17 из 1341
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