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The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films

Molecular docking studies of N-substituted 4-methoxy-6-oxo-1-aryl-pyridazine-3-carboxamide derivatives as potential modulators of glutamate receptors

Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy of the manuscript presented the results of a study of dark currents [1] and admittance [2] of the first variants

Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Theoretical justification of a purposeful search of potential neurotropic drugsTheoretical justification of a purposeful search of potential neurotropic drugs

On a question of the information technology construction based on self-learning medicine intelligent systemOn a question of the information technology construction based on self-learning medicine

Admittance of barrier nanostructures based on MBE HgCdTe

USP7 Inhibitors in Cancer Immunotherapy: Current Status and Perspective

Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator with different insulators were determined. MIS structures with Al2O3 have a large enough insulator capacitance

Antibacterial ferroelectric hybrid membranes fabricated via electrospinning for wound healing-tetrafluoroethylene to polyvinylpyrrolidone were used to control the properties of the membranes at a constant zinc oxide nanoparticle content

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