The GAN Era has Arrived in SATCOM Power Amplifiers
transistors (
GaNHEMTs) power amplifiers are considered.Maximum operating temperature widespread
now, gallium
Synthesis and structural analysis of InSb-Mg[3]Sb[2] compositesСистемы In
Sb-Mg[3]
Sb[2] синтезируются вертикальным методом Бриджмена-Стокбаргера.
Рентгенофазовый
Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structuresIzhnin, A. I.,
Fitsych, Olena I.,
Voytsekhovskiy, Alexander V.,
Gorn, Dmitriy Igorevich,
Semakova, A. A.,
Bazhenov, N. L.,
Mynbaev, Karim D.,
Zegrya, G. G.,
Izhnin, Igor I. grown with molecular beam epitaxy on
GaAs substrates. InAs
Sb-based structures were grown with metal