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По вашему запросу найдено документов: 343217

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Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Izhnin, A. I., Mynbaev, Karim D., Bazhenov, N. L., Shilyaev, A. V., Mikhailov, Nikolay N., Varavin, Vasilii S., Dvoretsky, Sergei A., Fitsych, Olena I., Voytsekhovskiy, Alexander V., Izhnin, Igor I.

Light emission from CdHgTe–based nanostructures

Mynbaev, K. D., Bazhenov, N. L., Izhnin, A. I., Izhnin, Igor I., Voytsekhovskiy, Alexander V., Mikhailov, Nikolay N., Varavin, Vasilii S., Dvoretsky, Sergei A., Shilyaev, A. V.

Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures

Izhnin, A. I., Fitsych, Olena I., Voytsekhovskiy, Alexander V., Gorn, Dmitriy Igorevich, Semakova, A. A., Bazhenov, N. L., Mynbaev, Karim D., Zegrya, G. G., Izhnin, Igor I.

Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots

Izhnin, Igor I., Pishchagin, Anton A., Kokhanenko, Andrey P., Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Nikiforov, Alexander I., Fitsych, Olena I.

This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Izhnin, Igor I., Syvorotka, I. I., Korotaev, A. G., Mynbaev, Karim D., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Remesnik, V. G., Yakushev, Maxim V., Voytsekhovskiy, Alexander V.

Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM

Izhnin, Igor I., Mynbaev, Karim D., Świątek, Zbigniew, Morgiel, Jerzy, Korotaev, Alexander G., Voytsekhovskiy, Alexander V., Fitsych, Olena I., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Bonchyk, A. Yu., Savytskyy, Hrygory V.

Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies

Izhnin, Igor I., Voytsekhovskiy, Alexander V., Korotaev, A. G., Fitsych, O. I., Pociask-Bialy, Malgorzata, Mynbaev, Karim D.

Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies

Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods

Izhnin, Igor I., Voytsekhovskiy, Alexander V., Korotaev, Alexander G., Mynbaev, Karim D.

The paper consisting of two parts presents a detailed consideration of the proposed method

Comparison of background donor concentration in HgCdTe grown with different technologies

Bonchyk, A. Yu., Savytskyy, Hrygory V., Fitsych, Olena I., Voytsekhovskiy, Alexander V., Izhnin, Igor I., Mohylyak, I. A.

Single-photon avalanche diode detectors based on group IV nanostructures

Izhnin, Igor I., Voytsekhovskiy, Alexander V., Kokhanenko, Andrey P., Lozovoy, Kirill A., Douhan, Rahaf M. H., Dirko, Vladimir V., Fitsych, Olena I.

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