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Analysis of the nBn-type barrier structures for infrared photodiode detectors

Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe

Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells

Electro-physical characteristics of MIS structures with HgTe-based single quantum wells

Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices

Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K

Theoretical model for description of single CdHgTe quantum well photoluminescense spectra

Admittance of HgCdTe MIS structures with HgTe single quantum well

Structure and dynamics of zooplankton of the Eastern Mediterranean (Matruch province, Egypt)

Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K

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