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Reactive ion etching parameters optimization in victory processA simulation of reactive ion etching (RIE) was carried out using Victory Process of Silvaco
Технология селективного реактивно-ионного травления нитрида кремния к поликристаллическому кремнию of silicon nitride. The process of selective reactive-ion etching of silicon nitride to polycrystalline
The influence of microwave CF4 plasma activation on the characteristics of reactive ion etching of mono-Si increases the rate of the reactive ion etching of monocrystalline silicon (mono-Si) by four and more times
Формирование функционального слоя интегральной микросхемы реактивно-ионным травлением process of selective reactive-ion etching of silicon nitride to polycrystalline silicon was obtained
Повышение селективности травления нитрида кремния к диоксиду кремния субмикронных интегральных схем a solution for increasing the selectivity of etching of silicon nitride obtained by chemical vapor
Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes responsible
Анализ технологии плазменной обработки полупроводниковых структур of dry etching, in particular, such a type of dry etching as ion-plasma processing, has been carried out
The formation of periodic diffractive plasmonic nanostructures with implanted copper nanoparticles by local ion etching of silica glassSilica glass was subjected to a low-energy implantation with 40-keV Cu+ ions at a dose of 7
The formation of periodic diffractive plasmonic nanostructures with implanted copper nanoparticles by local ion etching of silica glassSilica glass was subjected to a low-energy implantation with 40-keV Cu+ ions at a dose of 7
Some properties of near-surface layer of graded-gap MBE HgCdTe after boron ion implantation of boron and etching by ions of argon were detected. The concentrations of the major charge carriers
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