C60 capping of metallic 2D Tl-Au compound with preservation of its basic properties at the buried interface

Mararov, V. V.; Utas, T. V.; Bondarenko, Leonid V.; Tupchaya, Alexandra Yu.; Matetskiy, Andrey V.; Denisov, N. V.; Mihalyuk, Alexey N.; Eremeev, Sergey V.; Gruznev, Dimitry V.; Olyanich, D. A.; Zotov, Andrey V.; Saranin, Alexander A.

C60 capping of metallic 2D Tl-Au compound with preservation of its basic properties at the buried interface

Mararov, V. V., Utas, T. V., Bondarenko, Leonid V., Tupchaya, Alexandra Yu., Matetskiy, Andrey V., Denisov, N. V., Mihalyuk, Alexey N., Eremeev, Sergey V., Gruznev, Dimitry V., Olyanich, D. A., Zotov, Andrey V., Saranin, Alexander A.

Дата публикации: 2020

Дата публикации в реестре: 2021-01-19T20:05:01Z

Аннотация:

So-called metal-induced silicon reconstructions (i.e., metal films of monolayer or submonolayer thickness epitaxially grown on single-crystal silicon substrates in ultra-high vacuum) represent a specific class of low-dimensional advanced materials with potential prospects for electronic and spintronic applications. However, they are highly vulnerable to air and, thus, require protective capping. Finding a suitable material is a challenging task, since, in general, the metal-induced reconstructions are vulnerable also to overgrowth of solid layers. In the present study, we have found that C60 fullerite film shows up as a proper capping layer for the (Tl, Au)/Si(1 1 1) 7 х 7 compound reconstruction. Due to a perfect non-distractive epitaxial C60 overgrowth, the metallic Tl-Au compound preserves at the deeply buried interface its atomic structure and all basic electronic properties, including spin-splitting of surface-state bands and conductivity of metallic type with a weak antilocalization effect.

Ключевые слова:
кремний, фуллерены, атомная структура, электронная структура

Тип: статьи в журналах

Источник: Applied surface science. 2020. Vol. 501. P. 144253 (1-7)