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Production of beam of negative hydrogen and deuterium ions from source with electron cyclotron resonance

Golovanivskii K.S., Dzhayamanna K., Dugar-Zhabon V.D.

The GELIOS-H- ion source is described; it has electron cyclotron resonance and is designed

Differential turbulent heating of different ions in electron cyclotron resonance ion source plasma

Elizarov L.I., Ivanov A.A., Serebrennikov K.S., Vostrikova E.A.

in an electron cyclotron resonance ion source (ECRIS). The ion sound arises due to parametric instability

PROTOTYPE OF HELIOS-12 SOURCE OF MULTIPLY CHARGED IONS.

Golovanivskii K.S., Dugar-Zhabon V.D., Reznikov D.V., Safonov S.A.

A prototype of the HELIOS-12 single-chamber multiply charged ion source is described, which

An electron-cyclotron resonance ion sources

Golovanivskij K.S., Dugar-Zhabon V.D.

Short review of present status of development is given, and physical principles of ion sources

Enhancement of negative hydrogen ion production in an electron cyclotron resonance source

Dugar-Zhabon V.D., Murillo M.T., Karyaka V.I.

cyclotron resonance source with driven plasma rings where the negative ion production is realized in two

MULTIPLY CHARGED IONS IN A HOT-ELECTRON LAYER ION-SOURCE (HELIOS)

DUGARZHABON V.D., GOLOVANIVSKY K.S., SHEPILOV V.D.

MULTIPLY CHARGED IONS IN A HOT-ELECTRON LAYER ION-SOURCE (HELIOS)

Fabrication of nanoporous silicon by ion implantation

Kavetskyy T., Stepanov A.

© Springer Science+Business Media Dordrecht 2015. Ion implantation is an advanced new technological

ELECTRON-CYCLOTRON-RESONANCE ION SOURCES - REVIEW

GOLOVANIVSKII K.S., DOUGARJABON V.D.

The physical principles are described and a brief survey of the present state is given of ion

The effect of the core morphology of Eu(III)-doped nanoparticles on the ion exchange versus energy transfer between Eu(III) in the core and Cu(II) ions at the interface

Zairov R., Mustafina A., Shamsutdinova N., Rümmeli M., Amirov R., Burilov V., Pinus M., Morozov V., Ivanov V., Gogolashvili E., Tatarinov D., Mironov V., Konovalov A.

of these nanoparticles greatly affect their photophysical properties. The interfacial binding with d-ions exemplified

An analysis of the trigonal center structure of Yb3+ ion in CsCaF3

spectra are used to analyze distortions of a crystal lattice in the vicinity of an impurity ion

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