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Negative differential resistance in n-type noncompensated silicon at low temperature of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due

Negative differential resistance in n-type noncompensated silicon at low temperature of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due

Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transitionupper Hubbard band

Dynamic susceptibility in two-dimensional Hubbard model Hubbard and as in the case when chemical potential is displaced in the upper Hubbard band. It includes

Low temperature conductivity in n-type noncompensated silicon below insulator-metal transition mechanisms of the conductivity in the presence of two impurity bands, the upper and lower Hubbard bands (UHB

Dynamic susceptibility in two-dimensional Hubbard model Hubbard and as in the case when chemical potential is displaced in the upper Hubbard band. It includes

Делокализация электронных состояний в n-Si при низких температурах with an increase in current can be explained by the exchange of electrons between the upper Hubbard band, formed

The energy dispersion of the singlet correlated impurity band in layered cuprates cuprates using Hubbard projection operators. Hund's and Kondo-like exchange, copper-oxygen and oxygen

The spin susceptibility of singlet correlated oxygen band in La2-xSrxCuO4 in terms of two relevant band models containing the singlet-correlated oxygen band and the copper character

Charge-excitation picture of Cu NMR Knight shift and relaxation in YBa2Cu4O8 deduced from a 3-band Hubbard model. The starting point is a three-band Hubbard model comprising a Kondo-like exchange between the copper and oxygen

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