Properties of gallium oxide films obtained by HF-magnetron sputtering

Kalygina, V. M.; Novikov, Vadim A.; Prudaev, Ilya A.; Tolbanov, Oleg P.; Tyazhev, Anton V.; Lygdenova, T. Z.

Properties of gallium oxide films obtained by HF-magnetron sputtering

Kalygina, V. M., Novikov, Vadim A., Prudaev, Ilya A., Tolbanov, Oleg P., Tyazhev, Anton V., Lygdenova, T. Z.

Дата публикации: 2018

Дата публикации в реестре: 2020-03-03T18:23:21Z

Аннотация:

The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below the conduction band bottom.

Ключевые слова:
фазовый состав, вольт-амперная характеристика, пленки оксида галлия, магнетронное распыление

Тип: статьи в журналах

Источник: Russian physics journal. 2018. Vol. 60, № 11. P. 1911-1916