ToF-SIMS study of oxide films thermally grown on nickel-base alloys%)) were investigated in situ by Time-of-Flight Secondary Ion Mass Spectrometry (To
F-SIMS). The oxide layer
Halogen adsorption at an As-stabilized β2-GaAs (001)-(2×4) surfaceHalogen (
F, Cl, Br, and I) adsorption at an As-stabilized GaAs (001) surface with the β2–(2 × 4
The peculiarities of halogens adsorption on A3B5(001) surfaceTheoretical study of the
F, Cl, Br, I adsorption on GaAs(001) surface is presented. The most stable
Interaction of oxygen with the stable Ti5Si3 surface(0001) surface with TiSi termination was also studied. It was shown that the three-fold coordinated
F1 position