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Heat Capacity of Solid Tantalum: Self-Consistent Calculation wide temperature range from helium temperatures to the melting point of metal T-m. Calculation

Effect of nitrogen on mechanical properties of CoCrFeMnNi high entropy alloy at room and cryogenic temperaturesSpecimens of a CoCrFeMnNi high entropy alloy with different content of nitrogen (0.5e2.0 at.%) were

Structure and mechanical properties of near-eutectic refractory Al-Cr-Nb-Ti-Zr high entropy alloysIn this study, the structure and mechanical properties of the near-eutectic refractory Al₂₄Cr₁₁Nb₁₁

Thermodynamic properties of the fullerite at high temperatures: Calculations taking into account the intramolecular degrees of freedom and strong anharmonicity of the lattice vibrations for strongly anharmonic crystals, we study thermodynamic properties of the high-temperature (fcc) modification

Precipitation-hardened refractoryTi-Nb-Hf-Al-Ta high entropy alloysThis study reports the structure and mechanical properties of new refractory Ti₃₇.₅Nb₁₂.₅Hf₂₅Al₂₅

Microstructure and mechanical properties evolution in HfNbTaTiZr refractory high-entropy alloy during cold rollingThe effect of cold rolling on the structure and mechanical properties of the HfNbTaTiZr refractory

Rheological properties of epoxy oligomers and their mixtures in a wide temperature range in the regions of low and high temperatures were calculated. In a series of active diluents, the efficiency

Correlation of temperature dependences of thermal expansion and heat capacity of refractory metal up to the melting point: Tungsten(C) takes place not only at low temperatures, where it is linear and is known as the Gruneisen law, but also

Resistance investigation of diamond-like carbon coatings to cyclic temperature changes-resistant properties, in particular, high hardness, low friction coefficient, high wear resistance and chemical

Sintering and physico-mechanical properties of materials based on silicon nitride nanoscale powdersObtained a high-density material (ρ = 3,28 g/cm3, a porosity of 1,4 %) on the basis of silicon

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