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По вашему запросу найдено документов: 160602

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Structural and optical properties of nano-granular In2S3 films

Gremenok, V. F., Khoroshko, V. V., Tsyrelchuk, I. N., Sereda, A. S., Petlitskaya, T. V., Piatlitski, A. N., Ramakrishna Reddy, K. T., Rasool, S.

Nanostructuring of the CIGS Films Surface by the Plasma Treatment with Low Ion Energy

Zimin, S. P., Mazaletskiy, L. A., Amirov, I. I., Gorlachev, E. S., Gremenok, V. F., Khoroshko, V. V., Хорошко, В. В.

plasma treatment with the ion energy of 25–30eV within 30–120s. The films were fabricated on glass

Автоматизированная система управления данными для школы и ее эргономическое обеспечение

Гременок, Е. В., Gremenok, E. V.

Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap

Bodnar, I. V., Khoroshko, V. V., Yashchuk, V. A., Gremenok, V. F., Mohsin Kazi, Khandaker, M. U., Zubar, T. I., Tishkevich, D. I., Trukhanov, A. V., Trukhanov, S. V.

Impact of plasma nanostructuring on the electrical properties of Cu(In,Ga)Se 2 films

Zimin, S. P., Mokrov, D. A ., Amirov, I. I., Naumov, V. V., Gorlachev, E. S., Gremenok, V. F., Khoroshko, V. V., Хорошко, В. В.

in argon plasma. The average ion energy was 200 eV, the processing time was 60 s. It is shown

Optical Characteristics of Antireflection Coatings Based on Al2O3-SiO2 for Silicon Solar Cells

Suleymanov, S. X., Gremenok, V. F., Khoroshko, V. V., Ivanov, V. A., Dyskin, V. G., Djanklich, M. U., Kulagina, N. A., Гременок, В. Ф., Хорошко, В. В.

Formation of Metallic Droplets on the Surface of Indium Sulfide Films During Argon Plasma Treatment

Zimin, S. P, Pipkova, A. S., Mazaletskiy, L. A., Amirov, I. I., Gorlachev, E. S., Vasilev, S. V., Khoroshko, V. V., Gremenok, V. F., Pyatlitski, A. N., Хорошко, В. В.

–200 eV. Nanostructuring of the film surface took place resulting in the formation of arrays of nanosized

Investigation of thin films MgAl2O4, deposited on the Si substrates by vacuum thermal evaporation

Stanchik, A., Gremenok, V., Trukhanova, E. L., Khoroshko, V. V., Suleymanov, S. X., Dyskin, V. G., Djanklich, M. U., Kulagina, N. A., Amirov Shakhboz Yo. ugli

Growing crystals and studying structure and electronic properties of Cu2ZnGe(SхSe1-x)4 compositions

Bodnar, I. V., Khoroshko, V. V., Yashchuk, V. A., Gremenok, V. F., Mohsin Kazi, Khandaker, M. U., Abid, A. G., Zubar, T. I., Tishkevich, D. I., Trukhanov, A. V., Trukhanov, S. V.

Структурные, морфологические и оптические свойства тонких пленок CdS

Хорошко, В. В., Гременок, В. Ф., Цырельчук, И. Н., Аксенов, О. Д., Ли, В. К., Khoroshko, V. V., Gremenok, V. F., Tsyrelchuk, I. N., Aksyonov, О. В., Li, V. К.

S. The values of the band gap are in the range 2,39– 2,48 eV, which corresponds to the published data. The use

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