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Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

Reflectant photonic crystals produced via porous-alumina-assisted-anodizing of Al/Nb AND Al/Ta systems

Electro-Physical Properties of Niobia Columnlike Nanostructures via the Anodizing of Al/Nb Layers indicate a p-n or metal-semiconductor junction. The initial resistance at 23 °C was 60 and 120 k

Niobium and Tantalum-Anodic-Oxide Nanocolumn Arrays for 2-D Reflective Photonic-Crystals

Columnar Niobium Oxide Nanostructures: Mechanism of Formation, Microstructure, and Electrophysical Properties are studied and the transport numbers of electrolyte anions and niobium cations are calculated; a mechanism

Photosensitive heterostructures based on island-grid films and nanoporous matrices and sulphide nanostructures

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

Anodic Niobia Column-like 3-D Nanostructures for Semiconductor Devices

Morphology and Conductance Properties of Metal/oxide nanostructures formed by low-voltage anodising of Al/Та layersRecent study has shown that anodizing of a thin Та layer clad with an A1 layer (Al

Anodic aluminum oxide formed in aqueous solutions of chelated complex zinc and cobalt compounds.5−1.10 · 102 and 1.5−30 mA · cm−2, respectively. The kinetic features of anodizing have been established

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