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По вашему запросу найдено документов: 339950

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Innovations vs. Traditions: Notion, Essence, and Opposition Depending on Economic Systems' Financial Position
Tolmachev A.V., Kitsai J.A., Belaya O.V., Patlaze Z.A.
QUALITY MANAGEMENT OF SERVICES OF THE HIGHER EDUCATION
Sergeeva M.G., Gubarkov S.V., Zhigalov K.Y., Kurmaeva I.I., Tolmachev A.V.
INFORMATIONSUNTERSTÜTZUNG DES SCHULMANAGEMENTS IM VERWALTUNGSZENTRUM DER LÄNDLICHEN SIEDLUNG ATEPCEVSKOYE
Tolmachev A.A., Krukovskaya A.I., Matukhin P.G.
Differentiation of Russian Region in terms of the agricultural production
Tolmachev M., Bagautdinova N., Yashin N.
Modelling of economic growth in russian agriculture
Tolmachev M., Yashin N., Grigoryeva L.
MODELING SOME MATHEMATICAL OBJECTS AND OPERATIONS ON THEM WITH AN EXPANDED RELATIONAL DATA MODEL
LOZOVSKII N.D., TOLMACHEV I.L.
on the technology of relational data bases. A brief description is presented for the semantics of an extended
Structure and phase composition of additive Co-Cr-Mo alloy affected by the duration of mechanical alloying the composite powder
Khimich, Margarita A., Ibragimov, Egor A., Yakovlev, Vladimir I., Tolmachev, Alexey I., Chebodaeva, Valentina V., Uvarkin, Pavel V., Saprykina, Natalia A., Saprykin, Alexander A., Sharkeev, Yuriy P.
Shallow Donors and Deep-Level Color Centers in Bulk AlN Crystals: EPR, ENDOR, ODMR and Optical Studies
Soltamov V., Ilyin I., Soltamova A., Tolmachev D., Romanov N., Gurin A., Khramtsov V., Mokhov E., Makarov Y., Mamin G., Orlinskii S., Baranov P.
are estimated. The structure of deep-level color centers (neutral nitrogen vacancy V N) in bulk AlN crystals
Surface ozone concentration over Russian territory in 2020-2021
Stepanov E.V., Andreev V.V., Arshinov M.Yu., Belan B.D., Belan S.B., Chelibanov V.P., Davydov D.K., Elansky N.F., Ivlev3 G.A., Kozlov A.V., Kotel’nikov S.N., Kuznetsova I.N., Lapchenko V.A., Lezina E.A., Postylyakov O.V., Savkin D.E., Senik I.A., Tolmachev G.N., Fofonov A.V., Shukurov I.V.K.A.
Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure
Soltamov V., Yavkin B., Tolmachev D., Babunts R., Badalyan A., Davydov V., Mokhov E., Proskuryakov I., Orlinskii S., Baranov P.
© 2015 American Physical Society. We discovered a family of uniaxially oriented silicon vacancy

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