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Approaches to implementation of the ion-sensitive field-effect transistor compact models
Dao Dinh Ha
Approaches to implementation of the ion-sensitive field-effect transistor compact models
Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
Lovshenko, I. Yu., Khanko, V. T., Stempitsky, V. R.
The results of applying the compact model of junction field effect transistors developed
Robust random number generator based on field effect transistor
Ablayev F., Andrianov S., Vahrushev D., Ziatdinov M., Romanov V., Soloviev A.
of field effect transistor connected in a such a way that avalanche electron current emerges when an input
Concept of new compact model of deep-submicron MOSFET
Nelayev, V., Tran Tuan Trung
Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET
Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene
Abramov, I. I., Labunov, V. A., Kalameitsava, N. V., Romanova, I. A., Shcherbakova, I. Y.
) materials, especially graphene, in the field of micro- and nanoelectronics. Graphene has robust
Output Characteristics of Graphene Field Effect Transistors
Mishchenka, V. N.
output characteristics. The aim was to simulate the output characteristics of field effect transistors
Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal
Makovskaya, T. I., Danilyuk, A. L., Krivosheeva, A. V., Shaposhnikov, V. L., Borisenko, V. E., Маковская, Т. И., Данилюк, А. Л., Кривошеева, А. В., Шапошников, В. Л., Борисенко, В. Е.
and speed of field-effect transistors. Such transistors are free from some of the adverse effects present
Конструктивно-технологические особенности мощных транзисторов и их электротепловая модель
Сыс, А. Д.
field-effect transistors and their electrothermal model are considered. Optimal options
Spin injection in spin FETs using a step-doping profile
Shen M., Saikin S., Cheng M.
contact into a semiconductor quantum well in spin field-effect transistors using a Monte Carlo model
Компьютерное моделирование сенсоров токсичных наночастиц на основе гетероструктурного полевого транзистора
Волчёк, В. С., Стемпицкий, В. Р., Volcheck, V. S., Stempitsky, V. R.
at the application of heterostructure field-effect transistors – high electron mobility transistors–as a base

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