Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctionsTimofeev, V. A.,
Nikiforov, Alexander I.,
Mashanov, V. I.,
Tuktamyshev, A. R.,
Loshkarev, I. D.,
Kokhanenko, Andrey P. Results of investigations into the synthesis of heterostructures based on
Ge–Si–Sn materials
Solid-state synthesis and characterization of ferromagnetic Mn5Ge3 nanoclusters in GeO/Mn thin filmsMyagkov, V. G.,
Matsynin, A. A.,
Bykova, L. E.,
Zhigalov, V. S.,
Mikhlin, Y. L.,
Velikanov, D. A.,
Aleksandrovsky, A. S.,
Bondarenko, G. N. Mn5
Ge3 films are promising materials for spintronic applications due to their high spin
Синтез и исследование теплоемкости RBiGeO5 ( R = Ho, Er, Tm, Yb)Выпускная квалификационная работа по теме «Синтез и
исследование теплоёмкости RBi
GeO5 (
R = Ho, Er
NEXAFS studies of copper phthaloyanine on Ge(001)-2 × 1 and Ge(111)-c(2 × 8) surfacesNEXAFS studies of copper phthaloyanine on
Ge(001)-2 × 1 and
Ge(111)-c(2 × 8) surfaces
Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation of composite layers fabricated with the aid of implantation of single-crystalline silicon (c-Si) using
Ge+ (40
Теплоемкость и термодинамические свойства Ln2Ge2O7 и LnInGe2O7 (Ln=Er, Tm, Yb, Lu)Керамическим методом из исходных оксидов синтезированы соединения Er2
Ge2O7, Tm2
Ge2O7, Yb2
Ge2O7, Lu2