Shubnikov-de Haas oscillations in diluted magnetic semiconductors (Cd₁-x-yZnxMny)₃As₂.04 and 0.08) obtained by Bridgman method were used. The Shubnikov-de
Haas (SdH) effect was observed within
ИЗГОТОВЛЕНИЕ ДЕТАЛЕЙ РОБОТА НА ФРЕЗЕРНОМ СТАНКЕ HAAS ТМ-1ИЗГОТОВЛЕНИЕ ДЕТАЛЕЙ РОБОТА НА ФРЕЗЕРНОМ СТАНКЕ
HAAS ТМ-1
ИЗГОТОВЛЕНИЕ ДЕТАЛЕЙ РОБОТА НА ТОКАРНОМ СТАНКЕ HAAS TL-1ИЗГОТОВЛЕНИЕ ДЕТАЛЕЙ РОБОТА НА ТОКАРНОМ СТАНКЕ
HAAS TL-1
Transport evidence of mass-less Dirac fermions in (Cd₁-x-yZnxMny)₃As₂ (x+y=0.4).1nm-1, the charge carriers relaxation time due to dispersion tD =1.8×10-¹³
s, the velocity of charge
Surface origin of quasi-2D Shubnikov–de Haas oscillations in Bi2Te2Se in order to detect surface states. In each sample we observed Shubnikov–de
Haas (SdH) oscillations
Surface origin of quasi-2D Shubnikov–de Haas oscillations in Bi2Te2Se in order to detect surface states. In each sample we observed Shubnikov–de
Haas (SdH) oscillations