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По вашему запросу найдено документов: 1005012

Страница 1 из 100502

Recycling and disposal of gypsum-containing waste generated in the production of citric acid

Nikulicheva, T. B., Nikulin, I. S., Pilyuk, E. A., Voropaev, V. S., Alfimova, N. I.

Weak antilocalization and localization in Cd₃As₂ thin film

Nikulicheva, T. B., Zakhvalinskii, V. S., Pilyuk, E. A., Ivanov, O. N., Morocho, A. A., Yapryntsev, M. N.

Processing of rare earth metal oxide for use as a master alloy in the metallurgical industry

Nikulin, I. S., Nikulicheva, T. B., Anosov, N. V., Yapryntsev, M. N., Vyugin, A. O.

Optimization of technological parameters for obtaining a concentrated aqueous solution of salts containing rare earth elements extracted from phosphogypsum

Nikulin, I. S., Nikulicheva, T. B., Kolesnikov, D. A., Zakhvalinkiy, V. S., Vyugin, A. O.

Two-dimensional surface topological nanolayers and dirac fermions in single crystals of the diluted magnetic semiconductor (Cd1–x–yZnxMny)3As2 (x + y = 0.3)

Zakhvalinskii, V., Nikulicheva, T., Pilyuk, E., Ivanov, O., Kochura, A.

Hopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering

Zakhvalinskii, V. S., Pilyuk, E. A., Nikulicheva, T. B., Ivanchikhin, S. V., Yaprintsev, M. N., Goncharov, I. Yu., Kolesnikov, D. A., Morocho, A. A.

Elaboration the high mechanical strength medium for in vitro cultivation of lilacs under microgravity conditions

Nikulin, I., Tokhtar, L., Tokhtar, V., Tkachenko, N., Borodayeva, Z., Kul'ko, S., Nikulicheva, T.

Berry Phase in single crystals of the dilute magnetic semiconductor (Cd₀.₇Zn₀.₂₈Mn₀.₀₂)₃As₂

Zakhvalinskii, V. S., Nikulicheva, T. B., Pilyuk, E. A.

H) oscillations, observed in the temperature range T = 4.2 ÷ 30 K and at transverse magnetic field B = 0 ÷ 11 T

Hopping conduction in single crystals of the diluted magnetic semiconductor (Zn₁₋ₓFeₓ)₃As₂ (x=0.005)

Zakhvalinskii, V. S., Piliuk, E. A., Nikulicheva, T. B.

Transport evidence of mass-less Dirac fermions in (Cd₁-x-yZnxMny)₃As₂ (x+y=0.4)

Zakhvalinskiy, V. S., Nikulicheva, T. B., Pilyuk, E. A., Lähderanta, E., Shakhov, M. A.

.1nm-1, the charge carriers relaxation time due to dispersion tD =1.8×10-¹³ s, the velocity of charge

Страница 1 из 100502