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Effect of gallium arsenide charge carrier life time on the generation and detection efficiency of continuous and pulsed terahertz radiationA configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT

The visibility and stability of GaSe nanoflakes of about 50 layers on SiO2/Si wafers from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si

Methods of preparation and temporal stability of gase and InSe nanolayers

Optical absorption, photocarrier recombination dynamics and terahertz dielectric properties of electron-irradiated GaSe crystals values of the differential terahertz transmission at a specified photoexcitation condition were used

Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration

A comparison of terahertz electro-optic sampling in ZnTe, ZnSe, GaP and GaSe1-xSx crystalsA comparison of terahertz electro-optic sampling in ZnTe, ZnSe, GaP and GaSe1-xSx crystals

Electromagnetic processes in the multilayer circular cut-off waveguides

The mathematical model of the multilayer circular waveguides

Native oxide nanocrystals formation on the GaSe(001) cleaved surface

Microwave/RF sensors for composition control of continuous flows

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