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Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor
Dvornikov, O. V., Lovshenko, I., Stempitsky, V., Khanko, V. T.
-effect transistor
Approaches to implementation of the ion-sensitive field-effect transistor compact models
Dao Dinh Ha
Approaches to implementation of the ion-sensitive field-effect transistor compact models
Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness
Dvornikov, O. V., Lovshenko, I., Stempitsky, V., Khanko, V. T.
Optimization of structural and technological parameters of junction field-effect transistor
Organic memristive device as transistor: Working principle and possible applications
Battistoni S., Burganova R., Erokhin V.
as a transistor, so applying a modulatory gate voltage. Even if transistors and organic memristive
Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal
Makovskaya, T. I., Danilyuk, A. L., Krivosheeva, A. V., Shaposhnikov, V. L., Borisenko, V. E., Маковская, Т. И., Данилюк, А. Л., Кривошеева, А. В., Шапошников, В. Л., Борисенко, В. Е.
and speed of field-effect transistors. Such transistors are free from some of the adverse effects present
Organic memristive device as transistor: Working principle and possible applications
Battistoni S., Burganova R., Erokhin V.
as a transistor, so applying a modulatory gate voltage. Even if transistors and organic memristive
High voltage high repetition rate pulse using Marx topology
Hakki A., Kashapov N.
transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width
Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation
Tikhomirov V.G., Gudkov A.G., Agasieva S.V., Dynaiev D.D., Popov M.K., Chizhikov S.V.
Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical
Robust performance and stability of In2Оз thin-film transistors with atomic-layer-deposited channels
Qian Ma, Letao Zhang, Shengdong Zhang
Atomic-layer-deposition (ALD) ln20 3 thinfilm transistors (TFTs) were fabricated under a maximum
Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis
Dao Dinh Ha, Trung Tran Tuan, Volcheck, V. S., Stempitsky, V. R.
mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K

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