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Заглавие романа Стивена Чбоски "Perks of Being a Wallflower" как проблема перевода на немецкий и русский языки
Бутусова, Юлия Алексеевна
The title of Stephen Chbosky’s novel "Perks of Being a Wallflower" as a problem of translation
Измерение нефизической величины
Романчак, В. М.
Stephens’s law
Language, consciousness and culture: some suggestions to develop further the Moscow School of Psycholinguistics
Stephen, Pax Leonard, Ufimtseva, Natalia V., Markovina, Irina J.
The early proterozoic Matachewan Large Igneous Province: geochemistry, petrogenesis and implications for Earth evolution
Ciborowski, T. Jake R., Ernst, Richard E., McDonald, Iain, Minifie, Matthew J., Harlan, Stephen S., Millar, Ian L., Kerr, Andrew C.
Dating of lithospheric buckling: 40Ar/39Ar ages of syn-orocline strike–slipshear zones in northwestern Iberia
Gutiérrez-Alonso, Gabriel, Fernndez-Surez, Javier, Pastor-Galan, Daniel, Gonzlez-Clavijo, Emilio, Jourdan, Fred, Weil, Arlo B., Johnston, Stephen T., Collins, Alan S.
Why children differ in motivation to learn: Insights from over 13,000 twins from 6 countries
Kovas, Yulia V., Boivin, Michel, Petrill, Stephen A., Plomin, Robert, Malykh, Sergey B., Spinath, Frank, Murayama, Kou, Ando, Juko, Bogdanova, Olga Y., Yamagata, Shinji, Shikishima, Chizuru, Spinath, Birgit, Thompson, Lee A., Tikhomirova, Tatiana N., Tosto, Maria Grazia, Tremblay, Richard E., Vitaro, Frank, Garon-Carrier, Gabrielle, Brendgen, Mara, Dionne, Ginette, Forget-Dubois, Nadine, Galazhinsky, Eduard V., Gottschling, Juliana, Guay, Frederic, Lemelin, Jean-Pascal, Logan, Jessica A. R.
How to save money in a foundry production with opportunities offered by Industry 4.0 and ISO9001:2015 standard
Ransing, Rajesh S., Roshan, Hathibelagal M., Ransing, Meghana R., Brown, Stephen G. R.
Geochemistry and U-Pb geochronology of 1590 and 1550 Ma mafic dyke swarms of western Laurentia: Mantle plume magmatism shared with Australia
Kamo, S. L., Söderlund, Ulf, Hamilton, Mike А., Ernst, Richard E., Cousens, Brian, Harlan, Stephen S., Wade, C. E., Thorkelson, D. J., Rogers, C.
Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers
Nikolaev, Vladimir I., Polyakov, Alexander, Stepanov, Sergey I., Almaev, Aleksei V., Pechnikov, Aleksei I., Yakimov, Eugene, Kushnarev, Bogdan O., Shchemerov, Ivan, Scheglov, Mikhail P., Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Guzilova, Lyubov I., Pearton, Stephen J.
Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers
Polyakov, Alexander, Nikolaev, Vladimir I., Stepanov, Sergey I., Almaev, Aleksei V., Pechnikov, Aleksei I., Yakimov, Eugene, Kushnarev, Bogdan O., Shchemerov, Ivan, Scheglov, Mikhail P., Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Pearton, Stephen J.

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