Properties of gallium oxide films obtained by HF-magnetron sputteringKalygina, V. M.,
Novikov, Vadim A.,
Prudaev, Ilya A.,
Tolbanov, Oleg P.,
Tyazhev, Anton V.,
Lygdenova, T. Z. -magnetron sputtering are presented. It is shown that in the interval 290–350
K, the increase in the film conductivity
Oligoorganogermanes: interplay between aryl and trimethylsilyl substituents substituents, was synthesized by the reaction of germyl potassium salt, [(Me3Si)3Ge
K Ozone formation in ternary collisions: theory and experiment reconciled mechanism of ozone formation in the stratosphere-at temperatures below 200
K (for M = Ar) proceeds through a