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The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V., Marin, Denis V.
Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy
Izhnin, Igor I., Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V.
Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
Voytsekhovskiy, Alexander V., Dzyadukh, Stanislav M., Vasilev, Vladimir V., Varavin, Vasilii S., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Y., Nesmelov, Sergey N.
Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Admittance of barrier structures based on mercury cadmium telluride
Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V., Voytsekhovskiy, Alexander V.
Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V.
An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy
Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V.
Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range
Voytsekhovskiy, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Dvoretsky, Sergei A., Mikhailov, Nikolay N., Sidorov, Georgiy Yu., Yakushev, Maxim V.

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