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Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes

Prudaev, Ilya A., Tolbanov, Oleg P., Khludkov, Stanislav

GaN/GaN multiple quantum well light-emitting diodes are presented. A new model for explaining the complex current

Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation

Prudaev, Ilya A., Tolbanov, Oleg P., Kosobutsky, Alexey V., Sarkisov, Sergey Yu.

Generation of terahertz radiation in LED heterostructures with multiple InGaN/GaN quantum wells at two-photon excitation by femtosecond

Prudaev, Ilya A., Tolbanov, Oleg P., Kosobutsky, Alexey V., Sarkisov, Sergey Yu.

Luminescence of Ga2O3 crystals excited with a runaway electron beam

Burachenko, Alexander G., Prudaev, Ilya A., Sorokin, Dmitry A., Tarasenko, Viktor Fedotovich, Tolbanov, Oleg P., Beloplotov, Dmitry V.

crystals excited with a runaway electron beam and an excilamp with a wavelength of 222 nm were investigated

Electron irradiation degradation of AlGaInP/GaAs light‐emitting diodes

Brudnyi, Valentin N., Oleinik, Vladimir, Marmaluk, Alexander A., Prudaev, Ilya A.

. The beneficial effect of the Mg doping of the p‐GaP(Mg) window layer on the LEDs radiation tolerance at a high

Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs

Verkholetov, Maksim G., Koroleva, A. D., Tolbanov, Oleg P., Prudaev, Ilya A.

been studied. It has been found by solving the continuity and Poisson equations with the use of a

Properties of gallium oxide films obtained by HF-magnetron sputtering

Kalygina, V. M., Novikov, Vadim A., Prudaev, Ilya A., Tolbanov, Oleg P., Tyazhev, Anton V., Lygdenova, T. Z.

with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below

The optical properties of 9 MeV electron irradiated GaSe crystals

Redkin, R. A., Sarkisov, Sergey Yu., Kosobutsky, Alexey V., Brudnyi, V. N., Prudaev, Ilya A.

Deep centers in TiO2-Si structures

Kalygina, V. M., Prudaev, Ilya A., Tolbanov, Oleg P., Tsupiy, S. Yu., Petrova, Yu. S.

sputtering of a titanium-oxide target onto unheated n-Si substrates. The forward and reverse currents

Formation of dislocations in the process of impurity diffusion in GaAs

Khludkov, Stanislav S., Prudaev, Ilya A., Tolbanov, Oleg P., Ivonin, Ivan V.

A study of the formation of dislocations in the process of impurity diffusion in GaAs has been

Страница 2 из 30704